Methods of forming field effect transistors

ABSTRACT

A mass of material is formed over a semiconductor substrate. Semiconductive material is formed laterally proximate the mass of material. A space is provided laterally between the mass of material and the semiconductive material. The space comprises an outermost portion and a portion immediately adjacent thereto. The outermost portion has a maximum lateral width which is greater than that of the adjacent portion. Gate dielectric material and conductive gate material are formed within the space. The gate dielectric material and the conductive gate material in combination fill the adjacent portion of the space but do not fill the outermost portion of the space. At least the conductive gate material is etched from at least a majority of the outermost portion of the space. Source/drain regions are formed operatively proximate the conductive gate material and the semiconductive material is used as a channel region of the field effect transistor.

TECHNICAL FIELD

This invention relates to methods of forming field effect transistors.

BACKGROUND OF THE INVENTION

A continuing goal in integrated circuitry design is to make ever denser,and therefore smaller, circuit devices. This results in thinner layersand smaller geometries. Further, new deposition techniques and materialsare constantly being developed to enable circuit devices to be madesmaller than the previous generations. Additionally, circuit designssometimes fabricate the devices to be substantially horizontallyoriented relative to the underlying substrate, and sometimessubstantially vertically oriented.

One common circuitry device is a field effect transistor. Such includesa pair of conductive source/drain regions having a semiconductivechannel region received therebetween. A conductive gate is receivedproximate the channel region, with a gate dielectric layer beingreceived between the gate and the channel region. Application of asuitable voltage potential to the gate enables current to flow betweenthe source/drain regions through the channel region, with the transistorbeing capable of essentially functioning as a switch. This invention wasmotivated with respect to issues associated with fabricating fieldeffect transistors.

While the invention was motivated in addressing the above identifiedissues, it is in no way so limited. The invention is only limited by theaccompanying claims as literally worded, without interpretative or otherlimiting reference to the specification, and in accordance with thedoctrine of equivalents.

SUMMARY

The invention comprises methods of forming field effect transistors. Inone implementation, a mass of material is formed over a semiconductorsubstrate. Semiconductive material is formed laterally proximate themass of material. A space is provided laterally between the mass ofmaterial and the semiconductive material. The space comprises anoutermost portion and a portion immediately adjacent thereto. Theoutermost portion has a maximum lateral width which is greater than thatof the adjacent portion. Gate dielectric material and conductive gatematerial are formed within the space. The gate dielectric material andthe conductive gate material in combination fill the adjacent portion ofthe space but do not fill the outermost portion of the space. At leastthe conductive gate material is etched from at least a majority of theoutermost portion of the space. Source/drain regions are formedoperatively proximate the conductive gate material and thesemiconductive material is used as a channel region of the field effecttransistor.

In one implementation, a method of forming a field effect transistorincludes forming an insulative layer over a semiconductor substrate. Theinsulative layer comprises an opening therein. Semiconductive materialis formed within the opening and laterally spaced from the insulativelayer within the opening. The semiconductive material is provided tohave faceted outermost corner regions spaced from the insulative layer.Conductive gate material is formed over the faceted corner regions.Conductive gate material is etched from over at least a majority of thefaceted corner regions. Source/drain regions are formed operativelyproximate the conductive gate material and the semiconductive materialis used as a channel region of the field effect transistor.

Other aspects and implementations are contemplated.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

FIG. 1 is a diagrammatic sectional view of a substrate fragment inprocess in accordance with an aspect of the invention.

FIG. 2 is a view of the FIG. 1 substrate fragment at a processing stepsubsequent to that depicted by FIG. 1.

FIG. 3 is a view of the FIG. 2 substrate fragment at a processing stepsubsequent to that depicted by FIG. 2.

FIG. 4 is a view of the FIG. 3 substrate fragment at a processing stepsubsequent to that depicted by FIG. 3.

FIG. 5 is a view of the FIG. 4 substrate fragment at a processing stepsubsequent to that depicted by FIG. 4.

FIG. 6 is a view of the FIG. 5 substrate fragment at a processing stepsubsequent to that depicted by FIG. 5.

FIG. 7 is a view of the FIG. 6 substrate fragment at a processing stepsubsequent to that depicted by FIG. 6.

FIG. 8 is a view of the FIG. 7 substrate fragment at a processing stepsubsequent to that depicted by FIG. 7.

FIG. 9 is a diagrammatic sectional view of another substrate fragment inprocess in accordance with an aspect of the invention.

FIG. 10 is a diagrammatic sectional view of another substrate fragmentin process in accordance with an aspect of the invention.

FIG. 11 is a diagrammatic sectional view of another substrate fragmentin process in accordance with an aspect of the invention.

FIG. 12 is a diagrammatic sectional view of another substrate fragmentin process in accordance with an aspect of the invention.

FIG. 13 is a view of the FIG. 12 substrate fragment at a processing stepsubsequent to that depicted by FIG. 12.

FIG. 14 is a view of the FIG. 13 substrate fragment at a processing stepsubsequent to that depicted by FIG. 13.

FIG. 15 is a view of the FIG. 14 substrate fragment at a processing stepsubsequent to that depicted by FIG. 14.

FIG. 16 is a view of the FIG. 15 substrate fragment at a processing stepsubsequent to that depicted by FIG. 15.

FIG. 17 is an alternate view to that of FIG. 5, showing the FIG. 4substrate fragment at an alternate processing step subsequent to thatdepicted by FIG. 4.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of theconstitutional purposes of the U.S. Patent Laws “to promote the progressof science and useful arts” (Article 1, Section 8).

An exemplary embodiment of a method of forming a field effect transistoris initially described with reference to FIGS. 1-8. FIG. 1 depicts asubstrate fragment 10 comprising a semiconductor substrate 12. In thecontext of this document, the term “semiconductor substrate” or“semiconductive substrate” is defined to mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove. Further in the context of this document, the term “layer”encompasses both the singular and the plural unless otherwise indicated.By way of example only, semiconductor substrate 12 comprises a bulkmonocrystalline silicon material 18, but of course could comprisesemiconductor-on-insulator or other construction.

A mass of material 20 is formed over semiconductor substrate 12. Mass ofmaterial 20 has a thickness “A” over semiconductor substrate 12. In onepreferred embodiment, mass 20 has a space-defining edge 22, with atleast that portion of mass 20 received over semiconductor substrate 12which is adjacent to space-defining edge 22 being electricallyinsulative. By way of example only, one example material for mass 20 isdoped silicon dioxide, such as borophosphosilicate glass (BPSG). In onepreferred embodiment, at least a majority of mass 20 received oversemiconductor substrate 12 will remain as part of finished circuitryconstruction encompassing the field effect transistor being fabricated.In one preferred embodiment, mass 20 comprises one or more insulativelayers formed over semiconductor substrate 12.

In one preferred embodiment, semiconductive material is formed laterallyproximate the mass of material, with a space being provided laterallybetween the mass of material and the semiconductive material. In suchembodiment, the space comprises an outermost portion and a portionimmediately adjacent thereto. The outermost portion has a maximumlateral width which is greater than that of the adjacent portion. By wayof example only, an exemplary preferred method of forming suchsemiconductive material and space is described with reference to FIGS.2-6. Referring to FIG. 2, a sacrificial layer 24 has been deposited oversemiconductor substrate 20/12. Such material is preferably highlyselectively etchable relative to materials 20 and 18. By way of exampleonly, an exemplary material is silicon nitride where material 18comprises monocrystalline silicon and material 20 predominatelycomprises BPSG.

Referring to FIG. 3, sacrificial layer 24 has been anisotropicallyetched, thereby forming the illustrated spacer of material 24.

Referring to FIG. 4, semiconductive material 26 has been formedproximate spacer material 24. By way of example only, material 26 mightcomprise silicon, for example polycrystalline silicon, or asilicon-germanium mixture, or gallium arsenide. Such could be deposited,for example, by chemical vapor deposition followed by chemicalmechanical polishing thereof. In one most preferred embodiment,semiconductive material 26 comprises epitaxially-grown silicon, grownfrom a monocrystalline silicon outer surface of material 18 proximatespacer material 24.

Referring to FIG. 5, sacrificial spacer material 24 has been etched fromthe substrate substantially selectively relative to materials 26, 20 and18. Any suitable wet or dry chemistry could be utilized, with hotphosphoric acid being an exemplary chemistry for etching silicon nitrideselectively relative to silicon and BPSG. Such forms a space 28laterally between mass of material 20 and semiconductive material 26.Space 28 can be considered as comprising some outermost portion B and aportion C immediately adjacent thereto. By way of example only, adjacentportion C is depicted as extending from outermost portion B tosemiconductor substrate 12. However, a portion of space 28 immediatelyadjacent an outermost portion B only requires consideration of only aportion of the exemplary depicted portion C that is immediately adjacentportion B and not the entirety thereof (i.e., a portion C′). Regardless,in one preferred embodiment, outermost portion B of space 28 has aheight of at least 50 Angstroms, and in one preferred embodiment has aheight no greater than 400 Angstroms. Further and regardless, in onepreferred embodiment, space 28 extends along all of thickness A of massof material/layer 20 at least at this point in one preferred embodimentof a method in accordance with one aspect of the invention. Alternatelyof course, such space might not extend along all of such thickness A. Byway of example only, such is shown in FIG. 17 where some of material 26remains in a space 28 d on a substrate 10 d.

Referring to FIG. 6, outermost portion B of space 28 is provided to havea maximum lateral width D which is greater than that (a maximum lateralwidth E) of adjacent portion C. One manner of providing such a space 28might be during the actual formation (not shown in FIGS. 4-5) ofsemiconductive material 26 without separate etching of it after itsformation. Alternately as depicted by the FIGS. 5 and 6 embodiment,widened outermost portion D of space 28 is provided by removing anoutermost portion (i.e., the depicted removed corner portion) ofsemiconductive material 26 after such has been formed (i.e., theformation of such prior to any removing being depicted in FIG. 4).

For example, conditions can be chosen during selective epitaxialdeposition which inherently produce a construction having a facetedcorner during deposition of the epi. Facet evolution during selectiveepitaxial silicon deposition is typically determined by interfacettransport caused by atom diffusion from one facet to another, as well asby the relative growth rates of the various crystallographic planes.Thermodynamics impact and can dominate interfacet transport. Onmonocrystalline silicon, the directions for interfacet transport inepitaxial silicon deposition are generally from the (111) plane to the(311) plane, from the (311) plane to the (100) plane, and from the (111)plane to the (100) plane if the (311) plane disappears. From an energystandpoint, (111) facets are most favorable indicating that any facetingother than (111) results from non-equilibrium conditions. For all butthe slowest growth rates, thermodynamics play a minor role compared togrowth kinetics. Yet, kinetics are understood to typically dominatefaceting. Any faceting is affected by the epitaxial growth rate, withthe facets occurring on the slowest growing plane. If facet-free siliconepitaxy with (100) substrates is desired, the growth rate of (100)should be less than that of other planes. Temperature, pressure, and thepresence of HCI can impact the relative growth rates on the variousplanes. In general, reducing temperature, increasing pressure andreducing HCI presence lead to reduced faceting when depositing on (100)monocrystalline silicon. Accordingly, such processing can be utilized toproduce substantially facet-free epitaxially grown silicon is desired.Likewise, increasing temperature, reducing pressure and increasing HCIcan be utilized to produce the exemplary FIG. 6 depicted faceting duringdeposition when forming epitaxial monocrystalline silicon on, forexample, a (100) silicon substrate.

By way of example only, an exemplary process for forming substantiallyfacet-free deposited epitaxial silicon on Si(100) substrates includes atemperature of 750° C., pressure of 30 Torr, dichlorosilane flow of 0.2slm, HCI flow at 0.1 slm and H₂ flow at 15 slm. Further by way ofexample only, an exemplary method for depositing faceted epitaxialsilicon on Si(100) substrates during deposition, for example toinherently produce the structure of FIG. 6 during deposition, includes atemperature of 800° C., pressure of 10 Torr, dichlorosilane flow of 0.7slm, HCI flow at 0.1 slm and H₂ flow at 15 slm.

Alternately as alluded to above, a method of producing outermost portionB of space 28 to have a maximum lateral width which is greater than thatof adjacent portion C is by some removing action of an outermost portionof material 26 after the formation of material 26, and regardless of anydegree of faceting which might occur during the deposition of material26. By way of example only, exemplary methods include masked or masklessangled physical ion bombardment etching, dry etchback, and potassiumhydroxide wet etching.

In one preferred embodiment, outermost portion B of space 28 hasvariable width along its height, for example as depicted in FIG. 6.Regardless, in one preferred embodiment, semiconductive material 26comprises a planar surface 30 extending along at least some of outermostportion B of space 28, with FIG. 6 depicting one preferred embodimentwherein a planar surface 30 extends along all of outermost portion B ofspace 28. Of course, and alternately by way of example only, only/justsome of such surface might be planar in the depicted cross-section, orperhaps none of such surface be planar in the depicted cross-section.

In one preferred embodiment and as depicted, space 28 has asubstantially constant width along mass of material 20 fromsemiconductor substrate 12 outwardly to outermost portion B, namely allalong the depicted portion C.

Referring to FIG. 7, a gate dielectric material 34 and a conductive gatematerial 36 have been formed within space 28. Gate dielectric material34 and conductive gate material 36, in combination, fill adjacentportion C/C′ of space 28, but do not fill outermost portion B of space28. An exemplary preferred gate dielectric material comprises silicondioxide, with exemplary preferred conductive gate materials beingpolysilicon, titanium nitride and tantalum nitride.

Referring to FIG. 8, at least some of conductive gate material 36 isetched from at least a majority of outermost portion B of space 28. Inthe depicted preferred embodiment, such etching etches all of conductivegate material 36 from outermost portion B of space 28. In one mostpreferred embodiment, the etching of conductive gate material 36 isisotropic. By way of example only, an exemplary isotropic plasma etchingchemistry for polysilicon comprises a combination of NF₃, SF₆ and He orAr. Further by way of example only, an exemplary plasma etchingchemistry for TiN includes Cl₂ with about 15 weight percent CF₄. Furtherby way of example only, an exemplary etching chemistry for tantalumnitride comprises a mixture of Cl₂, O₂ and CF₄.

A continuing goal in field effect transistor fabrication is to preciselycontrol the length of the channel between the source/drain regions,which is essentially defined by the gate width. In the exemplarypreferred embodiment, this will be the height of the grown/depositedsemiconductive material 26 in combination with the height/thickness ofconductive gate material 36 formed thereover in space 28. A previous,non-inventive, method would produce the structure of FIG. 5, and fillthe depicted space with gate dielectric and conductive gate material.Some sort of anisotropic or isotropic etch would then be conducted, withthe goal being to precisely stop that etch near or at the upper surfaceof the grown epitaxial silicon, or to controllably have the conductivegate material etched back to below the upper surface of the epitaxiallygrown silicon to some controlled point. Regardless, control of such etchwas difficult, lacking any controllable point to stop the etch, with theetching of the gate layer being largely controlled only by the timing ofthe etch. Further, the more etching required, the more difficult it isto control such timing. By way of example only in the depicted FIG. 7embodiment, less than complete filling of an upper portion of the spaceenabled by a widened outer portion of that space results in lessconductive gate material thickness in a vertical direction needing to beremoved. Further, if the nature of the preferred etch is isotropic,etching attack on the conductive gate occurs along multiple sides ofmaterial 36, as depicted by the arrows in FIG. 7, as opposed toessentially largely or only from a single top surface as would occur ina prior method of the etch as described above. These two factors canenable or at least improve causing the end point for the conductive gateetch to stop in a more controlled manner, and further preferablycontrolled to stop at the corner where the widened portion of the spacemeets the depicted narrower portion of the space, although the inventionin its broadest sense is not so limited. Yet with less than fullydepleted transistor structures, such are less sensitive to channellength/gate width variation.

Further, the height A may vary or be hard to control due to CMP andother process variations. However since the height of the gate isessentially or largely tied to height C regardless of A and B, therewill likely be better reproducibility and control of the gate dimensionin the vertical dimension.

To provide an interconnect, or a simple means of contacting the gatematerial, one can form a patterning layer (not shown) after formation ofgate conductor 36 but before the exemplary FIG. 8 etching of conductor36. Such can be used to form generally horizontally oriented regions ofconductive material. For example and by way of example only, such mightbe used to make contacts to, or to form local interconnects.

In one preferred embodiment, the conductive gate material etching etchesnone of the conductive gate material from adjacent portion C, forexample as depicted in FIG. 8. Further of course, not all of material 36need be removed from space portion B, but such is preferred. Regardless,an alternate exemplary embodiment substrate fragment 10 a is depicted inFIG. 9. Like numerals form the first described embodiment have beenutilized where appropriate, with differences being indicated with thesuffix “a”. FIG. 9 depicts some of material 36 from adjacent portion Cof space 28 having been etched, leaving material 36 a.

FIGS. 10 and 11 illustrate alternate exemplary embodiment substratefragments 10 b and 10 c, respectively. Like numerals form the firstdescribed embodiments have been utilized where appropriate, withdifferences being indicated with the suffix “b” and the suffix “c”,respectively. FIGS. 10 and 11 depict semiconductive material 26 b, 26 c,respectively, comprising curved surfaces 30 b, 30 c, respectively,extending along at least some of the depicted outermost portions Bb, Bcof spaces 28 b, 28 c, respectively. In the depicted examples, curvedsurface 30 b is convex, and curved surface 30 c is concave. By way ofexample only, the profiles in FIGS. 10 and 11 can be created using Cl₂based dry plasma etching, particularly where sacrificial materials 26 band 26 c comprise epitaxially grown silicon, and with higher powersduring epitaxial growth tending toward convex profiles during thesubsequent etch and with lower powers during epitaxial growth tendingtoward concave profiles during the subsequent etch.

Source/drain regions are ultimately formed operatively proximate theconductive gate material, and the semiconductive material is used as achannel region of the field effect transistor which has been fabricated.By way of example only, such is depicted and described with reference toFIG. 8. For example, a region 40 of material 18 can be fabricated toconstitute at least a portion of one source/drain region of the fieldeffect transistor. Further by way of example only, an upper region 42 ofsemiconductive material 26 can be fabricated or otherwise conductivelydoped to comprise at least a portion of an opposing source/drain regionof the field effect transistor. In such example, semiconductive material26 received along line 44 is used as a channel region which is gated byconductive gate material 36 for imparting current flow betweensource/drain regions 40, 42 through material 26 spanning 44. Further insuch described example, at least some of semiconductive material 26 isthus formed to comprise at least some of at least one of thesource/drain regions, for example source/drain region 42.

By way of example only, an additional preferred method of forming afield effect transistor is described with reference to FIGS. 12-16. Likenumerals form the first described embodiment have been utilized whereappropriate, with differences being indicated with different numerals.FIG. 12 depicts a substrate fragment 50 comprising a semiconductorsubstrate 12. An insulative layer 52 has been formed over semiconductorsubstrate 12. Preferred attributes of layer 52 are the same as thatdescribed above with respect to mass of material 20. An opening 54 hasbeen formed within insulative layer 52. In one preferred embodiment,opening 54 extends to material 18, with a preferred outer surface ofmaterial 18 thereof comprising silicon-comprising material. Asacrificial material has been deposited and anisotropically etched toproduce spacers 56. Attributes of spacers 56 are preferably as describedabove with respect to spacer material 24.

Referring to FIG. 13, silicon comprising material 58 has beenepitaxially grown outwardly from the silicon comprising material 18within opening 54, and laterally spaced from insulative layer 52 withinopening 54. In the depicted embodiment, epitaxially grown silicon 58 isshown as having faceted outermost corner regions which could be theresult of deposition techniques as described above, or etchingsubsequent to the formation of material 58.

Referring to FIG. 14, material 56 has been removed from the substrate.Such provides but one example of providing opposing spaces 60, 62laterally between insulative layer 52 and epitaxially grown silicon 58.Opposing spaces 60, 62 comprise respective outermost portions B andrespective portions C immediately adjacent thereto, wherein outermostportions B have respective maximum lateral widths D which are greaterthan respective maximum lateral widths E of the respective adjacentportions C. Preferred attributes are otherwise as described above inconnection with the first described embodiment.

Referring to FIG. 15, a gate dielectric material 64 and a conductivegate material 66 have been formed within opposing spaces 60, 62. Gatedielectric material 64 and conductive gate material 66, in combination,fill the respective adjacent portions C of opposing spaces 60, 62, butdo not fill the respective outermost portions B of opposing spaces 60,62. Preferred attributes are otherwise as described above with respectto materials 34 and 36 of the first described embodiment.

Referring to FIG. 16, at least conductive gate material 66 is etchedfrom at least a majority of the respective outermost portions B ofopposing spaces 60, 62, for example as described above in connectionwith the FIGS. 8 and 9 embodiments. Preferred attributes are otherwiseas described above. Source/drain regions are ultimately formedoperatively proximate conductive gate material 66 and using epitaxiallygrown silicon comprising material 58 as a channel region of the fieldeffect transistor. Preferred attributes are otherwise as described abovein connection with the FIGS. 1-11 embodiments.

In one exemplary embodiment, a method of forming a field effecttransistor comprises forming an insulative layer over a semiconductorsubstrate, with the insulative layer comprising an opening therein(i.e., by deposition and subsequent patterning thereof). Semiconductivematerial is formed within the opening and laterally spaced from theinsulative layer within the opening. The semiconductive material isprovided to have faceted outermost corner regions which are spaced fromthe insulative layer. By way of example only, FIG. 14 depicts such asubstrate so provided.

Conductive gate material is formed over the faceted corner regionsregardless of whether completely or partially filling an outer portionof the space defined in part by such faceted corner regions. Suchconductive gate material is then etched from over at least a majority ofthe faceted corner regions. Source/drain regions are formed operativelyproximate the conductive gate material, and the semiconductive materialis used as a channel region of the field effect transistor that isformed. Preferred attributes are otherwise as described above andclaimed herein.

Aspects of the invention might be used to fabricate 4F² areaencompassing field effect transistors. Further, advantages might existin improving contact area and alignment tolerances in aspects of theinvention.

In compliance with the statute, the invention has been described inlanguage more or less specific as to structural and methodical features.It is to be understood, however, that the invention is not limited tothe specific features shown and described, since the means hereindisclosed comprise preferred forms of putting the invention into effect.The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A method of forming a field effect transistor, comprising: forming amass of material over a semiconductor substrate; forming semiconductivematerial laterally proximate the mass of material, a space beingprovided laterally between the mass of material and the semiconductivematerial, the space comprising an outermost portion and a portionimmediately adjacent thereto, the outermost portion having a maximumlateral width which is greater than that of the adjacent portion;forming gate dielectric material and conductive gate material within thespace, the gate dielectric material and the conductive gate material incombination filling the adjacent portion of the space but not fillingthe outermost portion of the space; etching at least the conductive gatematerial from at least a majority of the outermost portion of the space;and forming source/drain regions operatively proximate the conductivegate material and using the semiconductive material as a channel regionof the field effect transistor.
 2. The method of claim 1 wherein theoutermost portion of the space has a height of at least 50 Angstroms. 3.The method of claim 2 wherein the outermost portion of the space has aheight no greater than 400 Angstroms.
 4. The method of claim 1 whereinat least a majority of the mass of material received over thesemiconductor substrate remains as part of finished circuitryconstruction encompassing the field effect transistor.
 5. The method ofclaim 1 wherein at least that portion of the mass of material receivedover the semiconductor substrate which is adjacent the space isinsulative.
 6. The method of claim 1 wherein the mass of material has athickness over the semiconductor substrate, the space extending alongall of said thickness.
 7. The method of claim 6 wherein the space has asubstantially constant width along the mass of material from thesemiconductor substrate outwardly to the outermost portion.
 8. Themethod of claim 1 wherein the mass of material has a thickness over thesemiconductor substrate, the space extending along less than all of saidthickness.
 9. The method of claim 1 wherein the semiconductive materialcomprises silicon.
 10. The method of claim 9 wherein the semiconductivematerial comprises epitaxially grown silicon comprising material. 11.The method of claim 9 wherein the semiconductive material comprisespolycrystalline silicon.
 12. The method of claim 1 wherein thesemiconductive material comprises gallium arsenide.
 13. The method ofclaim 1 wherein the semiconductive material comprises a planar surfaceextending along at least some of the outermost portion of the space. 14.The method of claim 13 wherein the planar surface extends along all ofthe outermost portion of the space.
 15. The method of claim 1 whereinthe outermost portion of the space has variable width.
 16. The method ofclaim 15 wherein the semiconductive material comprises a planar surfaceextending along at least some of the outermost portion of the space. 17.The method of claim 16 wherein the planar surface extends along all ofthe outermost portion of the space.
 18. The method of claim 15 whereinthe semiconductive material comprises a curved surface extending alongat least some of the outermost portion of the space.
 19. The method ofclaim 18 wherein the outermost portion of the space has a height of atleast 50 Angstroms.
 20. The method of claim 19 wherein the outermostportion of the space has a height no greater than 400 Angstroms.
 21. Themethod of claim 18 wherein the curved surface is convex.
 22. The methodof claim 18 wherein the curved surface is concave.
 23. The method ofclaim 1 wherein the etching etches none of the conductive gate materialfrom the adjacent portion of the space.
 24. The method of claim 1wherein the etching etches all of the conductive gate material from theoutermost portion of the space.
 25. The method of claim 24 wherein theetching etches some of the conductive gate material from the adjacentportion of the space.
 26. The method of claim 1 wherein the etching isisotropic of the conductive gate material.
 27. The method of claim 26wherein the etching etches all of the conductive gate material from theoutermost portion of the space.
 28. The method of claim 27 wherein theetching etches none of the conductive gate material from the adjacentportion of the space.
 29. The method of claim 1 wherein the outermostportion of the space is provided by removing an outermost portion of thesemiconductive material after its formation.
 30. The method of claim 1wherein the outermost portion of the space is provided during formationof the semiconductive material without separate etching of it after itsformation.
 31. The method of claim 1 wherein at least some of thesemiconductive material is formed to comprise at least some of at leastone of the source/drain regions.
 32. The method of claim 1 whereinproviding the space comprises depositing a sacrificial layer, followedby anisotropically etching the sacrificial layer to form a spacer,followed by etching the spacer from the substrate.
 33. A method offorming a field effect transistor, comprising: forming an insulativelayer over a semiconductor substrate, the insulative layer comprising anopening therein extending to silicon comprising material; epitaxiallygrowing silicon comprising material outwardly from the siliconcomprising material within the opening and laterally spaced from theinsulative layer within the opening, opposing spaces being providedlaterally between the insulative layer and the epitaxially grown siliconcomprising material, the opposing spaces comprising respective outermostportions and respective portions immediately adjacent thereto, therespective outermost portions having respective maximum lateral widthswhich are greater than that of the respective adjacent portions; forminggate dielectric material and conductive gate material within theopposing spaces, the gate dielectric material and the conductive gatematerial in combination filling the respective adjacent portions of theopposing spaces but not filling the respective outermost portions of theopposing spaces; etching at least the conductive gate material from atleast a majority of the respective outermost portions of the opposingspaces; and forming source/drain regions operatively proximate theconductive gate material and using the epitixially grown siliconcomprising material as a channel region of the field effect transistor.34. The method of claim 33 wherein the insulative layer has a thicknessover the semiconductor substrate, the opposing spaces extending alongall of said thickness.
 35. The method of claim 34 wherein the opposingspaces have respective substantially constant widths along theinsulative layer from the semiconductor substrate outwardly to therespective outermost portions.
 36. The method of claim 33 wherein theepitixially grown silicon comprises respective planar surfaces extendingalong at least some of the respective outermost portions of the opposingspaces.
 37. The method of claim 36 wherein the respective planarsurfaces extend along all of the respective outermost portions of theopposing spaces.
 38. The method of claim 33 wherein the respectiveoutermost portions of the opposing spaces have variable widths.
 39. Themethod of claim 38 wherein the epitixially grown silicon comprisesrespective planar surfaces extending along at least some of therespective outermost portions of the opposing spaces.
 40. The method ofclaim 39 wherein the respective planar surfaces extend along all of therespective outermost portions of the opposing spaces.
 41. The method ofclaim 38 wherein the epitixially grown silicon comprises respectivecurved surfaces extending along at least some of the respectiveoutermost portions of the opposing spaces.
 42. The method of claim 41wherein the curved surface is convex.
 43. The method of claim 41 whereinthe curved surface is concave.
 44. The method of claim 33 wherein theetching etches all of the conductive gate material from the respectiveoutermost portions of the opposing spaces.
 45. The method of claim 44wherein the etching etches some of the conductive gate material from therespective adjacent portions of the opposing spaces.
 46. The method ofclaim 33 wherein the etching is isotropic of the conductive gatematerial.
 47. The method of claim 46 wherein the etching etches all ofthe conductive gate material from the respective outermost portions ofthe opposing spaces.
 48. The method of claim 33 wherein the respectiveoutermost portions of the opposing spaces are provided by removingoutermost portions of the epitixially grown silicon after its formation.49. The method of claim 33 wherein the respective outermost portions ofthe opposing spaces are provided during formation of the epitixiallygrown silicon without separate etching of it after its formation. 50.The method of claim 33 wherein the outermost portions of the opposingspaces have heights of at least 50 Angstroms.
 51. The method of claim 50wherein the outermost portions of the opposing spaces have heights nogreater than 400 Angstroms.
 52. A method of forming a field effecttransistor, comprising: forming an insulative layer over a semiconductorsubstrate, the insulative layer comprising an opening therein; formingsemiconductive material within the opening and laterally spaced from theinsulative layer within the opening; providing the semiconductivematerial to have faceted outermost corner regions spaced from theinsulative layer; forming conductive gate material over the facetedcorner regions; etching the conductive gate material from over at leasta majority of the faceted corner regions; and forming source/drainregions operatively proximate the conductive gate material and using thesemiconductive material as a channel region of the field effecttransistor.
 53. The method of claim 52 wherein the semiconductivematerial comprises silicon.
 54. The method of claim 53 wherein thesemiconductive material comprises epitaxially grown silicon comprisingmaterial.
 55. The method of claim 53 wherein the semiconductive materialcomprises polycrystalline silicon.
 56. The method of claim 52 whereinthe semiconductive material comprises gallium arsenide.
 57. The methodof claim 52 wherein the etching etches all of the conductive gatematerial received over the faceted corner regions.
 58. The method ofclaim 52 wherein the etching is isotropic of the conductive gatematerial.
 59. The method of claim 58 wherein the etching etches all ofthe conductive gate material received over the faceted corner regions.60. The method of claim 52 wherein the providing is by facet etching ofoutermost portions of the semiconductive material after its formation.61. The method of claim 52 wherein the providing is by facet formationduring formation of the semiconductive material without separate etchingof it after its formation.
 62. The method of claim 52 wherein thefaceted outermost corner regions have heights of at least 50 Angstroms.63. The method of claim 62 wherein the faceted outermost corner regionshave heights no greater than 400 Angstroms.